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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">ntv</journal-id><journal-title-group><journal-title xml:lang="ru">Научно-технический вестник информационных технологий, механики и оптики</journal-title><trans-title-group xml:lang="en"><trans-title>Scientific and Technical Journal of Information Technologies, Mechanics and Optics</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2226-1494</issn><issn pub-type="epub">2500-0373</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2226-1494-2024-24-3-357-365</article-id><article-id custom-type="elpub" pub-id-type="custom">ntv-252</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ОПТИЧЕСКИЕ СИСТЕМЫ И ТЕХНОЛОГИИ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>OPTICAL ENGINEERING</subject></subj-group></article-categories><title-group><article-title>Исследование влияния управляющего напряжения фазового модулятора на основе ниобата лития на величину паразитной амплитудной модуляции и распределение интенсивности оптического излучения на торцах канальных волноводов</article-title><trans-title-group xml:lang="en"><trans-title>Investigation of the effect of the applied voltage to the control electrodes of a lithium niobate phase modulator on the intensity distribution at the ends of channel waveguides and on parasitic amplitude modulation</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-6898-3400</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Шулепова</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Shulepova</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Шулепова Алена Викторовна — инженер</p><p>Санкт-Петербург, 197101</p></bio><bio xml:lang="en"><p>Alena V. Shulepova — Engineer</p><p>Saint Petersburg, 197101</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-2168-8046</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Шулепов</surname><given-names>В. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Shulepov</surname><given-names>V. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Шулепов Владимир Андреевич — кандидат технических наук, начальник группы</p><p>Санкт-Петербург, 197101</p></bio><bio xml:lang="en"><p>Vladimir A. Shulepov — PhD, Team Leader, ITMO University</p><p>Saint Petersburg, 197101</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-7151-9235</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Стригалев</surname><given-names>В. Е.</given-names></name><name name-style="western" xml:lang="en"><surname>Strigalev</surname><given-names>V. E.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Стригалев Владимир Евгеньевич — кандидат физико-математических наук, доцент, профессор, старший научный сотрудник</p><p>Санкт-Петербург, 197101</p></bio><bio xml:lang="en"><p>Vladimir E. Strigalev — PhD (Phisics &amp; Mathematics), Assistant Professor, Professor, Senior Researcher</p><p>Saint Petersburg, 197101</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Университет ИТМО</institution><country>Россия</country></aff><aff xml:lang="en"><institution>ITMO University</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2024</year></pub-date><pub-date pub-type="epub"><day>16</day><month>12</month><year>2024</year></pub-date><volume>24</volume><issue>3</issue><fpage>357</fpage><lpage>365</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Шулепова А.В., Шулепов В.А., Стригалев В.Е., 2024</copyright-statement><copyright-year>2024</copyright-year><copyright-holder xml:lang="ru">Шулепова А.В., Шулепов В.А., Стригалев В.Е.</copyright-holder><copyright-holder xml:lang="en">Shulepova A.V., Shulepov V.A., Strigalev V.E.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://ntv.elpub.ru/jour/article/view/252">https://ntv.elpub.ru/jour/article/view/252</self-uri><abstract><p>Введение. Известно, что при прохождении оптического излучения через фазовый модулятор многофункциональной интегрально-оптической схемы (МИОС) наряду с модуляцией фазы световой волны происходит изменение мощности оптического излучения на выходе состыкованного волновода. Такая модуляция является паразитной, а ее величина зависит от управляющего напряжения на электродах модулятора. Наличие амплитудной модуляции приводит к возникновению ошибки в выходном сигнале высокочувствительных фазовых датчиков, в частности, в волоконно-оптическом гироскопе. В данной работе представлено экспериментальное исследование изменения пространственного распределения интенсивности (модового поля) на торце канальных волноводов МИОС под действием приложенного напряжения. Метод. Экспериментальная установка включала источник излучения в виде одночастотного лазера RIO ORION с центральной длиной волны излучения 1550 нм. В качестве оптического приемника применена инфракрасная камера SP503U-1550 с регистрацией излучения в диапазоне длин волн 1440–1605 нм, размерами пиксела 9,9 × 9,9 мкм и матрицы 640 × 480 пикселов. МИОС была выполнена по технологии диффузии титана в подложку кристалла ниобата лития (Ti:LiNbO3) Х-среза. На электроды фазового модулятора МИОС подавалось постоянное управляющее напряжение в диапазоне от –10 В до +10 В. Распределение интенсивности оптического излучения в волноводах МИОС и в одномодовом оптическом волокне с эллиптической напрягающей оболочкой ESC-4 анализировалось путем расчета интеграла перекрытия. Основные результаты. Экспериментально показано воздействие электрического поля на оптическое излучение в волноводах МИОС. Продемонстрировано, что при постоянном напряжении на управляющих электродах фазового модулятора наблюдается изменение распределения интенсивности излучения на выходе канальных волноводов. Наблюдаемые изменения коррелируют с паразитной амплитудной модуляцией, возникновение которой связано с распространением паразитного оптического излучения по волноводу. Это явление обусловлено выходом оксида лития с поверхностного слоя LiNbO3 в газовую фазу в ходе технологического процесса диффузии титана. Обсуждение. Проведенные исследования позволяют лучше понять механизмы возникновения паразитной амплитудной модуляции в фазовом модуляторе МИОС и разработать практические рекомендации по их устранению. Полученные результаты могут быть полезны специалистам, занимающимся исследованиями в области создания высокочувствительных фазовых датчиков на основе МИОС.</p></abstract><trans-abstract xml:lang="en"><p>It is known that when optical radiation passes through the phase modulator of a multifunctional integrated-optical chip (MIOC), along with the modulation of the phase of the light wave, there is a change in the power of optical radiation at the output of the coupled waveguide. This modulation is parasitic, and its magnitude depends on the control voltage at the modulator electrodes. Amplitude modulation leads to an error in the output signal of highly sensitive phase sensors, in particular, in a fiber optic gyroscope. This paper presents an experimental study of the change in the spatial intensity distribution (mode field) at the end of channel waveguides of a multifunctional integrated-optical chip under the action of an applied voltage. The experimental setup was assembled with a radiation source in the form of a single- frequency laser RIO ORION with a central emission wavelength of 1550 nm. The optical receiver was an infrared camera SP503U-1550 with radiation registration in the wavelength range 1440–1605 nm, pixel size 9.9 × 9.9 μm and matrix size 640 × 480 pixels. The multifunctional integrated-optical chip was fabricated by titanium diffusion technology in Ti:LiNbO3 X-cut lithium niobate crystal substrate. A constant control voltage in the range from –10 V to +10 V was applied to the electrodes of the MIOC phase modulator. The distribution of optical radiation intensity in MIOC waveguides and in a single-mode optical fiber with an elliptical ESC-4 straining sheath was analyzed by calculating the overlap integral. The effect of electric field on optical radiation in MIOC waveguides is experimentally demonstrated. It is demonstrated that at constant voltage at the control electrodes of the phase modulator change in the radiation intensity distribution at the output of channel waveguides is observed. The observed changes correlate with parasitic amplitude modulation. The occurrence of parasitic amplitude modulation is due to the propagation of parasitic optical radiation along the waveguide. This phenomenon is caused by the escape of lithium oxide from the surface layer of lithium niobate into the gas phase during the technological process of titanium diffusion. The studies have allowed us to better understand the mechanisms of parasitic amplitude modulation in the phase modulator of MIOC and to develop practical recommendations for their elimination. These results can be useful for specialists working on research in the field of highly sensitive phase sensors using integrated optic circuits.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>паразитная амплитудная модуляция</kwd><kwd>канальный волновод</kwd><kwd>модовое поле</kwd><kwd>фазовый модулятор</kwd><kwd>МИОС</kwd><kwd>ниобат лития</kwd></kwd-group><kwd-group xml:lang="en"><kwd>residual amplitude modulation</kwd><kwd>channel waveguide</kwd><kwd>mode field</kwd><kwd>phase modulator</kwd><kwd>MIOC</kwd><kwd>lithium niobate</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена в рамках государственного задания Министерства науки и высшего образования Российской Федерации (проект № FSER-2024-0006).</funding-statement><funding-statement xml:lang="en">The research was carried out within the state assignment of the Ministry of Science and Higher Education of the Russian Federation (project No. FSER-2024-0006).</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Lefèvre Н.С. 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