ntvНаучно-технический вестник информационных технологий, механики и оптикиScientific and Technical Journal of Information Technologies, Mechanics and Optics2226-14942500-0373Университет ИТМО10.17586/2226-1494-2022-22-1-25-32ntv-255Research ArticleНОВЫЕ МАТЕРИАЛЫ И НАНОТЕХНОЛОГИИMATERIAL SCIENCE AND NANOTECHNOLOGIESИсследование кремниевых p-n структур с моно- и мультифоточувствительными поверхностямиA study of silicon p-n structures with mono- and multifacial photosensitive surfaceshttps://orcid.org/0000-0003-2846-1901МирзаалимовА. А.MirzaalimovA.

Мирзаалимов Авазбек Алишерович — аспирант

sc 55807268500

Андижан, 170100

Avazbek Mirzaalimov — PhD Student

sc 55807268500

Andijan, 170100

avazbek.mirzaalimov@mail.ruhttps://orcid.org/0000-0001-7516-987XГуломовЖ.GulomovJ.

Гуломов Жасурбек — студент

sc 57221531752

Андижан, 170100

Jasurbek Gulomov — Student

sc 57221531752

Andijan, 170100

jasurbekgulomov@yahoo.comhttps://orcid.org/0000-0003-1986-2199АлиевР.AlievR.

Алиев Райимжон — доктор технических наук, профессор, профессор

sc 7102561277

Андижан, 170100

Rayimjon Aliev — D.Sc., Full Professor

sc 7102561277

Andijan, 170100

alievuz@yahoo.comhttps://orcid.org/0000-0002-9264-3710МирзаалимовН. А.MirzaalimovN.

Мирзаалимов Наврузбек Алишер угли — аспирант

sc 57223835161

Андижан, 170100

Navruzbek Mirzaalimov — PhD Student

sc 57223835161

Andijan, 170100

mirzaalimov90@mail.ruhttps://orcid.org/0000-0002-4494-8261АлиевС.AlievS.

Алиев Сухроб — PhD, проректор

sc 7006390145

Андижан, 170100

Suhrob Aliev — PhD, Vice-rector

sc 7006390145

Andijan, 170100

suhrob_asr89@mail.ruАндижанский государственный университетУзбекистанAndijan State UniversityUzbekistanАндижанский машиностроительный институтУзбекистанAndijan Machine-Building InstituteUzbekistan2022161220242212532Copyright © Мирзаалимов А.А., Гуломов Ж., Алиев Р., Мирзаалимов Н.А., Алиев С., 20242024Мирзаалимов А.А., Гуломов Ж., Алиев Р., Мирзаалимов Н.А., Алиев С.Mirzaalimov A., Gulomov J., Aliev R., Mirzaalimov N., Aliev S.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://ntv.elpub.ru/jour/article/view/255

Повышение эффективности и сокращение расхода кремния при производстве солнечных элементов являются актуальными проблемами. Один из путей их решения — создание двух- и трехлицевых солнечных элементов. Выходная мощность солнечного элемента при двухстороннем освещении в 1,72 раза и при трехстороннем освещении в 2,81 раза превышает мощность односторонне освещенного (обычного) солнечного элемента. При освещении солнечного элемента светом высокой интенсивности актуальным становится учет температуры его нагрева. В работе исследовано влияние температуры на свойства многосторонне освещаемого солнечного элемента. Определен характер изменения температурных коэффициентов основных фотоэлектрических параметров кремниевых солнечных элементов при различных условиях (одно-, двух- и трехстороннего) освещения. Температурный коэффициент трехсторонне освещаемых солнечных элементов для напряжения холостого хода составил величину 2,52·10–3 В/К, коэффициент заполнения вольтамперной характеристики 1,8·10–3 К–1. При изменении температуры солнечного элемента от 300 до 350 К плотность тока короткого замыкания уменьшается всего на 4 %.

Increase in the efficiency and reduction of silicon consumption in production of solar cells are relevant problems. Designing two and three facial solar cells can be seen as a solution for such tasks. Compared to usual SC, the output power of two and three facial solar cells exceeds by 1.72 times by 2.81 times, respectively. Illumination of solar cells with high intensity light makes the temperature of its heating an important characteristic. Therefore, the paper investigates the influence of temperature on properties of multifacial solar cells. We defined the nature of change of temperature coefficients for the main photovoltaic parameters that are inherent to silicon solar cells under various (one, two and three facial) conditions of lighting. Temperature coefficients of three facial solar cells are 2.52·10–3 V/K for open circuit voltage and 1.8·10–3 K–1 for fill factor of I-V. At temperature change of SC from 300 K to 350 K, the density of short circuit current decreases only by 4 %.

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The authors declare that there are no conflicts of interest present.