ntvНаучно-технический вестник информационных технологий, механики и оптикиScientific and Technical Journal of Information Technologies, Mechanics and Optics2226-14942500-0373Университет ИТМО10.17586/2226-1494-2022-22-1-147-154ntv-290Research ArticleМАТЕМАТИЧЕСКОЕ И КОМПЬЮТЕРНОЕ МОДЕЛИРОВАНИЕMODELING AND SIMULATIONНовая аналитическая модель тока стока и параметров малых сигналов AlGaN-GaN транзисторов с высокой подвижностью электроновA new analytical model of drain current and small signal parameters for AlGaN-GaN high-electron-mobility transistorshttps://orcid.org/0000-0002-8694-1471ФартиА.FartiA.

Фарти Аззеддин — PhD, доцент

Касабланка, 20190

Azzeddine Farti — PhD, Associate Professor

Casablanca, 20190

azzeddine.farti-etu@etu.univh2c.mahttps://orcid.org/0000-0001-8582-1884ТухамиА.TouhamiA.

Тухами Абделькадер — D.Sc, профессор, профессор

sc 8158211000

Касабланка, 20190

Abdelkader Touhami — D.Sc, Full Professor

sc 8158211000

Casablanca, 20190

abdelkadertouhami2016@gmail.comУниверситет Хасана II, Факультет наук КасабланкиМароккоHassan II University of CasablancaMorocco202217122024221147154Copyright © Фарти А., Тухами А., 20242024Фарти А., Тухами А.Farti A., Touhami A.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://ntv.elpub.ru/jour/article/view/290

Предложена новая аналитическая модель тока стока в устройствах AlGaN-GaN транзисторов с высокой подвижностью электронов (HEMT) на основе полиномиального выражения для уровня Ферми как функции концентрации носителей заряда. В ходе исследования изучено влияние паразитных сопротивлений (стороны истока и стока), высокоскоростного насыщения, количества алюминия в барьере AlGaN и низкой подвижности поля. Для выделения выходных характеристик, частоты среза и крутизны разработаны параметры гиперчастотного сигнала. Сравнение аналитических расчетов с экспериментальными измерениями подтвердило справедливость предложенной модели.

The paper proposes a new analytical model of the drain current in AlGaN-GaN high-electron-mobility transistors (HEMT) on the basis of a polynomial expression for the Fermi level as a function of the concentration of charge carriers. The study investigated the influence of parasitic resistances (source and drain sides), high-speed saturation, the amount of aluminum in the AlGaN barrier, and low field mobility. To isolate the output characteristics, cut-off frequency and steepness, the parameters of the hyper frequency signal were developed. Comparison of analytical calculations with experimental measurements confirmed the validity of the proposed model.

AlGaN-GaNтранзистор с высокой подвижностью электроновHEMTдвумерный электронный газвольтамперная характеристикачастота срезакрутизна характеристикиAlGaN-GaNHEMTs2-DEG two-dimensional electron gascurrent–voltage characteristicscut-off frequenciesTransconductanceРабота выполнена на факультете наук Айн Чок Km 8, Университет Хасана II, Касабланка, Марокко.This work carried out at the Faculty of Sciences Ain Chok Km 8, Hassan II University, Casablanca, Morocco.ReferencesLiu J., Guo Y., Zhang J., Yao J., Huang X., Huang C., Huang Z., Yang K. Analytical model for the potential and electric field distributions of AlGaN/GaN HEMTs with gate connected FP based on Equivalent Potential Method // Superlattices and Microstructures. 2020. V. 138. P. 106327. https://doi.org/10.1016/j.spmi.2019.106327Liu J., Guo Y., Zhang J., Yao J., Huang X., Huang C., Huang Z., Yang K. 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The authors declare that there are no conflicts of interest present.