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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">ntv</journal-id><journal-title-group><journal-title xml:lang="ru">Научно-технический вестник информационных технологий, механики и оптики</journal-title><trans-title-group xml:lang="en"><trans-title>Scientific and Technical Journal of Information Technologies, Mechanics and Optics</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2226-1494</issn><issn pub-type="epub">2500-0373</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2226-1494-2024-24-3-406-414</article-id><article-id custom-type="elpub" pub-id-type="custom">ntv-299</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ФОТОНИКА И ОПТОИНФОРМАТИКА</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>PHOTONICS AND OPTOINFORMATIСS</subject></subj-group></article-categories><title-group><article-title>Люминесцентные и колориметрические свойства покрытых оболочкой диоксида кремния сферических нанокристаллов теллурида кадмия во внешнем электрическом поле</article-title><trans-title-group xml:lang="en"><trans-title>Luminescent and colorimetric properties of silica-coated spherical cadmium telluride nanocrystals in an external electric field</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-1944-1546</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Дайбаге</surname><given-names>Д. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Daibagya</surname><given-names>D. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Дайбаге Даниил Саюзович — младший научный сотрудник; ассистент</p><p>Москва, 119991</p><p>Москва, 105005</p></bio><bio xml:lang="en"><p>Daniil S. Daibagya — Junior Researcher; Assistant</p><p>Moscow, 119991</p><p>Moscow, 105005</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-3906-0735</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Амброзевич</surname><given-names>С. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Ambrozevich</surname><given-names>S. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Амброзевич Сергей Александрович — кандидат физико-математических наук, старший научный сотрудник; доцент</p><p>Москва, 119991</p><p>Москва, 105005</p></bio><bio xml:lang="en"><p>Sergey A. Ambrozevich — PhD (Physics &amp; Mathematics), Senior Researcher; Associate Professor</p><p>Moscow, 119991</p><p>Moscow, 105005</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-1502-6460</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Захарчук</surname><given-names>И. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Zakharchuk</surname><given-names>I. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Захарчук Иван Александрович — младший научный сотрудник</p><p>Москва, 119991</p></bio><bio xml:lang="en"><p>Ivan A. Zakharchuk — Junior Researcher</p><p>Moscow, 119991</p></bio><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-9556-4885</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Осадченко</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Osadchenko</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Осадченко Анна Владимировна — ассистент; младший научный сотрудник</p><p>Москва, 105005</p><p>Москва, 119991</p></bio><bio xml:lang="en"><p>Anna V. Osadchenko — Assistant</p><p>Moscow, 105005,</p><p>Moscow, 119991</p></bio><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-4007-6291</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Селюков</surname><given-names>А. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Selyukov</surname><given-names>A. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Селюков Александр Сергеевич — кандидат физико-математических наук, младший научный сотрудник</p><p>Москва, 119991</p></bio><bio xml:lang="en"><p>Alexandr S. Selyukov — PhD (Physics &amp; Mathematics), Junior Researcher</p><p>Moscow, 119991</p></bio><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Физический институт им. П.Н. Лебедева РАН; Московский государственный технический университет им. Н.Э. Баумана</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Lebedev Physical Institute of the Russian Academy of Sciences; Bauman Moscow State Technical University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Физический институт им. П.Н. Лебедева РАН</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Lebedev Physical Institute of the Russian Academy of Sciences</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Московский государственный технический университет им. Н.Э. Баумана; Физический институт им. П.Н. Лебедева РАН</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Bauman Moscow State Technical University; Junior Researcher, Lebedev Physical Institute of the Russian Academy of Sciences</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2024</year></pub-date><pub-date pub-type="epub"><day>17</day><month>12</month><year>2024</year></pub-date><volume>24</volume><issue>3</issue><fpage>406</fpage><lpage>414</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Дайбаге Д.С., Амброзевич С.А., Захарчук И.А., Осадченко А.В., Селюков А.С., 2024</copyright-statement><copyright-year>2024</copyright-year><copyright-holder xml:lang="ru">Дайбаге Д.С., Амброзевич С.А., Захарчук И.А., Осадченко А.В., Селюков А.С.</copyright-holder><copyright-holder xml:lang="en">Daibagya D.S., Ambrozevich S.A., Zakharchuk I.A., Osadchenko A.V., Selyukov A.S.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://ntv.elpub.ru/jour/article/view/299">https://ntv.elpub.ru/jour/article/view/299</self-uri><abstract><sec><title>Введение</title><p>Введение. Исследовано поведение оптических и колориметрических свойств покрытых оболочкой диоксида кремния полупроводниковых коллоидных квантовых точек теллурида кадмия (CdTe/SiO2, ядро/оболочка) во внешнем постоянном электрическом поле. Известно, что внешнее электрическое поле приводит в основном к тушению люминесценции квантовых точек и красному смещению спектров люминесценции. Однако в большинстве исследований рассматривается только люминесценция, обусловленная межзонными переходами. В отличие от известных работ в данном исследовании дополнительно рассмотрена люминесценция с участием ловушек в квантовых точках, покрытых оболочкой, и показано влияние на нее внешнего электрического поля. Метод. Полупроводниковые нанокристаллы CdTe/SiO2 синтезированы методами коллоидной химии. Готовая смесь представляла собой раствор квантовых точек в водной среде. Для исследования оптических свойств наночастиц CdTe/SiO2 во внешнем постоянном электрическом поле изготовлена серия образцов на основе оптически пассивной целлюлозной пленки, в поры которой были внедрены квантовые точки. Готовый образец представлял собой помещенную между двумя стеклами с прозрачными электродами на основе оксида индия-олова целлюлозную пленку с квантовыми точками. Напряженность постоянного электрического поля, прикладываемого к таким структурам, составила 140 кВ/см. Спектры фотолюминесценции исследуемых наноструктур регистрировались с помощью волоконного ПЗС-спектрометра. </p></sec><sec><title>Основные результаты</title><p>Основные результаты. Обнаружено, что увеличение внешнего электрического поля приводит к тушению интенсивности люминесценции, обусловленной как межзонными переходами, так и переходами с участием ловушек. Показано, что при значении напряженности поля 60 кВ/см происходит небольшое увеличение интегральной интенсивности фотолюминесценции. Установлена стабильность колориметрических характеристик сферических наночастиц во внешнем электрическом поле. Обсуждение. Снижение интенсивности свечения квантовых точек во всем спектре объясняется уменьшением интеграла перекрытия между волновыми функциями электрона и дырки под действием электрического поля. В свою очередь, наличие в зависимости интегральной интенсивности люминесценции от величины внешнего электрического поля локального максимума может быть связано с блокировкой процессов захвата ловушками носителей заряда. Продемонстрированное тушение интенсивности люминесценции также согласуется с результатами подобных работ, показавших снижение поглощения квантовых точек во внешних электрических полях. Результаты работы могут быть использованы при создании оптоэлектронных устройств на основе наночастиц CdTe/SiO2.</p></sec></abstract><trans-abstract xml:lang="en"><p>The study concerns the behavior of optical and colorimetric properties of cadmium telluride semiconductor colloidal quantum dots covered with silica shell (CdTe/SiO2, core/shell) in an external constant electric field has been studied. To date, the electric field is known to lead mainly to quenching and red shift of the luminescence spectra of quantum dots; however, in most of the corresponding studies only the behavior of band-edge luminescence is considered. In this work, in addition to the luminescence due to interband transitions, the effect of the electric field on the trap-related luminescences of core/shell quantum dots is studied. Semiconductor nanocrystals were synthesized by colloidal chemistry methods. The product mixture was a solution of quantum dots in an aqueous medium. To investigate the optical properties of CdTe/SiO2 nanoparticles in an external electric field, a series of samples was fabricated on the basis of an optically passive cellulose film, in the pores of which quantum dots were embedded. The final sample was a cellulose film with quantum dots sandwiched between two glasses with transparent indium tin oxide electrodes. The strength of the constant electric field applied to such structures reached 140 kV/cm. Photoluminescence spectra of the investigated nanostructures were recorded using a CCD spectrometer. As a result of the experiments it was found that the presence and subsequent increase of the external electric field leads to quenching of the intensity of both band-edge and trap- related photoluminescence of quantum dots. This fact is associated with a decrease in the overlap between electron and hole wave functions under the action of the electric field. It is also shown that at moderate field strength there is a slight increase in the total photoluminescence intensity. This observation can be related to impeded charge carrier trapping. The demonstrated quenching of luminescence intensity is also consistent with the results of other authors who have shown a decrease in the absorption of quantum dots in external electric fields. The stability of colorimetric characteristics of the spherical nanoparticles in an external electric field has been demonstrated. The results of the study can be used for development of optoelectronic devices based on CdTe/SiO2 nanoparticles.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>фотолюминесценция</kwd><kwd>теллурид кадмия</kwd><kwd>диоксид кремния</kwd><kwd>квантовые точки</kwd><kwd>электрическое поле</kwd><kwd>колориметрия</kwd></kwd-group><kwd-group xml:lang="en"><kwd>photoluminescence</kwd><kwd>cadmium telluride</kwd><kwd>silicon dioxide</kwd><kwd>quantum dots</kwd><kwd>electric field</kwd><kwd>colorimetry</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Авторы выражают благодарность декану Физического факультета Воронежского государственного университета О.В. Овчинникову, а также профессору кафедры Оптики и спектроскопии Воронежского государственного университета М.С. Смирнову за предоставленные коллоидные наночастицы.</funding-statement><funding-statement xml:lang="en">Authors are grateful to the Dean of the Faculty of Physics of Voronezh State University O.V. 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