ntvНаучно-технический вестник информационных технологий, механики и оптикиScientific and Technical Journal of Information Technologies, Mechanics and Optics2226-14942500-0373Университет ИТМО10.17586/2226-1494-2023-23-3-473-482ntv-7Research ArticleНОВЫЕ МАТЕРИАЛЫ И НАНОТЕХНОЛОГИИMATERIAL SCIENCE AND NANOTECHNOLOGIESМатематическое моделирование трехслойного диэлектрика OTFT на основе пентаценового полупроводника для улучшения электрических характеристикMathematical modelling of tri-layer dielectric OTFT based on pentacene semiconductor for enhancing the electrical characteristicshttps://orcid.org/0000-0001-6769-0948ПангалД.PanghalD.

Пангал Дипика — магистр, исследователь 

Сонипат, 131039 

Deepika Panghal — Research Scholar, Department of ECE 

Sonepat, 131039 

deepikapanghal5@gmail.comhttps://orcid.org/0000-0001-9580-9766ЯдавР.YadavR.

Ядав Рекха — доктор наук, доцент 

sc 57208815836 

Сонипат, 131039 

Rekha Yadav — D.Sc. Associate Professor, Department of ECE 

sc 57208815836 

Sonepat, 131039 

rekhayadav.ece@dcrustm.orgУниверситет науки и технологий Динбандху Чхоту РамИндияDeenbandhu Chhotu Ram University of Science and TechnologyIndia202310122024233473482Copyright © Пангал Д., Ядав Р., 20242024Пангал Д., Ядав Р.Panghal D., Yadav R.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://ntv.elpub.ru/jour/article/view/7

Органические тонкопленочные полевые транзисторы (Organic thin film transistors, OTFTs) широко используются по нескольким причинам. Процессы их проектирования менее сложны, чем при традиционной кремниевой технологии, которая требует особые методы фотолитографического формирования рисунка и процессов высокотемпературного и высоковакуумного осаждений. Наиболее трудоемкие процедуры, используемые в традиционной кремниевой технологии, могут быть заменены низкотемпературным осаждением и обработкой на твердый раствор. OTFT на основе однослойной диэлектрической среды имеют большой ток утечки между истоком и стоком из-за несовместимости сопротивлений диэлектрической среды. В работе представлена модель трехслойной диэлектрической среды на основе органического полупроводника пентацена. В трехслойном OTFT использованы три диэлектрические среды: SiO2, POM-H (полиоксиметилен-гомополимер) и PEI-EP (полиэтиленимин-эпоксидная смола) для снижения тока утечки и увеличения подвижности между истоком и стоком. Выполнена оценка и сравнение значений параметров: тока стока IDS, порогового напряжения Vt и подвижности μ для разработанного трехслойного диэлектрического OTFT с одно- и двухслойными моделями. Полученные значения параметров для разработанной модели OTFT при напряжении затвора VG = –10 В составили: IDS = –4,44 мА; μ = 0,0215 см2/(В·с) (для напряжения стока VDS = –2,5 В) и Vt =0,2445 В. Полученные значения параметров оказались больше, чем в одно- и двухслойных диэлектрических моделях OTFT. Таким образом, математическое моделирование разработанной трехслойной структуры продемонстрировало улучшение электрических характеристик по сравнению с другими типами OTFT.

Organic thin film transistors (OTFTs) are significant for several reasons because their design processes are less complicated than those of conventional silicon technology which requires complex photolithographic patterning techniques and high-temperature and high-vacuum deposition processes. The more complex procedures used in traditional Si technology can be replaced by low-temperature deposition and solution processing. OTFTs based on the single-layer dielectric medium are poor in reducing the leakage current among the source and drain channel due to the incompatible resistance of dielectric medium. The paper presents a model of a tri-layer dielectric medium based on the organic semiconductor pentacene. In this tri-layer OTFT, three different dielectric mediums are used, such as SiO2, POM-H (PolyOxyMethylene-Homopolymer) and PEI-EP (PolyEthyleneImine–Epoxy resin), for reducing the leakage current and enhancing the mobility among the source and drain channel. The parameter values, such as drain current IDS, threshold voltage Vt and mobility for the designed tri-layer dielectric OTFT, are evaluated and compared with the single layer and bi-layer OTFT models. Thus, the attained mobility, drain current and threshold voltage for the proposed OTFT model are 0.0215 cm2/(V·s), –4.44 mA for –10 V gate and –2.5 V drain voltage (VDS) and threshold value 0.2445 V (Vt) for gate voltage –10 V (VG). These attained parameter values are greater than the single- and bi-layer dielectric OTFT models. Thus, the mathematical modeling of the designed tri-layer dielectric OTFT model enhances the electrical characteristics of the other OTFT models.

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The authors declare that there are no conflicts of interest present.