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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">ntv</journal-id><journal-title-group><journal-title xml:lang="ru">Научно-технический вестник информационных технологий, механики и оптики</journal-title><trans-title-group xml:lang="en"><trans-title>Scientific and Technical Journal of Information Technologies, Mechanics and Optics</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2226-1494</issn><issn pub-type="epub">2500-0373</issn><publisher><publisher-name>Университет ИТМО</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17586/2226-1494-2022-22-5-903-911</article-id><article-id custom-type="elpub" pub-id-type="custom">ntv-74</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>НОВЫЕ МАТЕРИАЛЫ И НАНОТЕХНОЛОГИИ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MATERIAL SCIENCE AND NANOTECHNOLOGIES</subject></subj-group></article-categories><title-group><article-title>Исследование оптических явлений  в мультиспектральном матричном фотоприемнике на основе кремния</article-title><trans-title-group xml:lang="en"><trans-title>Investigation of optical phenomena  in multispectral matrix photodetector based on silicon</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-7597-0675</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Жбанова</surname><given-names>В. Л.</given-names></name><name name-style="western" xml:lang="en"><surname>Zhbanova</surname><given-names>V. L.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Жбанова Вера Леонидовна — кандидат технических наук, доцент, доцент</p><p>г. Смоленск, 214013</p></bio><bio xml:lang="en"><p>Vera L. Zhbanova — PhD, Associate Professor, Associate Professor</p><p>Smolensk, 214013</p><p>sc 57190029669</p></bio><email xlink:type="simple">Vera-zhbanova@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-7219-652X</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Парвулюсов</surname><given-names>Ю. Б.</given-names></name><name name-style="western" xml:lang="en"><surname>Parvulusov</surname><given-names>Yu. B.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Парвулюсов Юрий Борисович — кандидат технических наук, профессор, заслуженный геодезист</p><p>Москва, 105064</p></bio><bio xml:lang="en"><p>Yurij B. Parvulusov — PhD, Professor, Honored Geodesist</p><p>Moscow, 105064</p></bio><email xlink:type="simple">parvulusov@miigaik.ru</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Филиал федерального государственного бюджетного образовательного учреждения высшего образования «Национальный исследовательский университет «МЭИ» в г. Смоленске</institution><country>Россия</country></aff><aff xml:lang="en"><institution>The Branch of National Research University “Moscow Power Engineering Institute” in Smolensk</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Московский государственный университет геодезии и картографии</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Moscow State University of Geodesy and Cartography</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2022</year></pub-date><pub-date pub-type="epub"><day>12</day><month>12</month><year>2024</year></pub-date><volume>22</volume><issue>5</issue><fpage>903</fpage><lpage>911</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Жбанова В.Л., Парвулюсов Ю.Б., 2024</copyright-statement><copyright-year>2024</copyright-year><copyright-holder xml:lang="ru">Жбанова В.Л., Парвулюсов Ю.Б.</copyright-holder><copyright-holder xml:lang="en">Zhbanova V.L., Parvulusov Y.B.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://ntv.elpub.ru/jour/article/view/74">https://ntv.elpub.ru/jour/article/view/74</self-uri><abstract><sec><title>Предмет исследования</title><p>Предмет исследования. Представлено исследование в области разработки и создания модернизированных мультиспектральных систем цветоделения многослойного типа, обладающих повышенным цветовым разрешением. Рассмотрены виды структур разработанных шаблонов матричных фотоприемников на основе многослойного кремния с рабочими слоями для применения в синем, зеленом, красном и инфракрасном диапазонах спектра.</p></sec><sec><title>Метод</title><p>Метод. Предложена методика расчетов слоев кремния в виде оптических пленок с заданными характеристиками. Слои кремния выполняют функции как чувствительного элемента, так и фильтра определенной длины волны для выделения синиего, зеленого, красного и инфракрасного диапазонов спектра. Выполнен расчет коэффициентов отражения и пропускания для выбранных длин волн при различных углах падения на сенсор. Рассчитан угол Брюстера для этих длин волн. Учтено возможное наличие поверхности сенсора микролинзы. Представлены расчеты для ячеек с четырехслойной и двухслойной структурами при различных комбинациях слоев.</p></sec><sec><title>Основные результаты</title><p>Основные результаты. Получены зависимости коэффициентов отражения и пропускания для двухслойных и четырехслойных структур полупроводниковых сенсоров для p- и s-поляризации, также для неполяризованного света. Показано, что минимальным коэффициентом отражения и максимальным коэффициентом пропускания обладает сочетание слоев красного и инфракрасного диапазонов спектра.</p></sec><sec><title>Практическая значимость</title><p>Практическая значимость. Полученные результаты могут быть использованы при разработке многослойных мультиспектральных систем с регистрацией инфракрасного излучения. В результате возможно применение пары красного и инфракрасного спектров в качестве основы шаблона матричного фотоприемника, а слои синего и зеленого спектров как вспомогательные для построения полноцветного изображения.</p></sec></abstract><trans-abstract xml:lang="en"><p>A study is presented in the field of development and creation of modernized multi-layer color separation multispectral systems with increased color resolution. The types of structures of the developed patterns of matrix photodetectors based on multilayer silicon with working layers for use in the blue, green, red and infrared spectral ranges are considered. A method for calculating silicon layers in the form of optical films with specified characteristics is proposed. The silicon layers act as both a sensing element and a specific wavelength filter to highlight the blue, green, red and infrared ranges of the spectrum. The reflection and transmission coefficients were calculated for the selected wavelengths at various angles of incidence on the sensor. The Brewster angle for these wavelengths is also calculated. The possible presence of a microlens sensor surface is taken into account. Calculations are presented for cells with four-layer and two-layer structures for various combinations of layers. The dependences of the reflection and transmission coefficients for two-layer and four-layer structures of semiconductor sensors for p- and s-polarization, also for unpolarized light, are obtained. It is shown that the combination of layers in the red and infrared ranges of the spectra has the minimum reflection coefficient and the maximum transmission coefficient. The results obtained can be used in the development of multilayer multispectral systems with registration of infrared radiation. As a result, it is possible to use a pair of red and infrared spectra as the basis of a matrix photodetector pattern, and layers of blue and green spectra as auxiliary ones for building a full-color image.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>фотоприемник</kwd><kwd>инфракрасный</kwd><kwd>сенсор</kwd><kwd>тонкие пленки</kwd><kwd>многослойный</kwd><kwd>кремний</kwd><kwd>потенциальная яма</kwd><kwd>отражение</kwd><kwd>пропускание</kwd></kwd-group><kwd-group xml:lang="en"><kwd>photodetector</kwd><kwd>infrared</kwd><kwd>sensor</kwd><kwd>thin films</kwd><kwd>multilayer</kwd><kwd>silicon</kwd><kwd>potential well</kwd><kwd>reflection</kwd><kwd>transmission</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Исследование выполнено за счет гранта Российского научного фонда № 21-79-00012, https://rscf.ru/ project/21-79-00012/</funding-statement><funding-statement xml:lang="en">The research was carried out at the expense of a grant from the Russian Science Foundation № 21-79-00012, https:// rscf.ru/en/project/21-79-00012/</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Андрианов В.П., Базаров Ю.Б., Губачев А.В., Дулин О.Н., Елгаёнков А.Е., Каменев В.Г., Кузин В.М., Литвинова М.С., Лобастов С.А., Туркин В.Н., Шубин А.С. 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