Mathematical modelling of tri-layer dielectric OTFT based on pentacene semiconductor for enhancing the electrical characteristics
https://doi.org/10.17586/2226-1494-2023-23-3-473-482
Abstract
Organic thin film transistors (OTFTs) are significant for several reasons because their design processes are less complicated than those of conventional silicon technology which requires complex photolithographic patterning techniques and high-temperature and high-vacuum deposition processes. The more complex procedures used in traditional Si technology can be replaced by low-temperature deposition and solution processing. OTFTs based on the single-layer dielectric medium are poor in reducing the leakage current among the source and drain channel due to the incompatible resistance of dielectric medium. The paper presents a model of a tri-layer dielectric medium based on the organic semiconductor pentacene. In this tri-layer OTFT, three different dielectric mediums are used, such as SiO2, POM-H (PolyOxyMethylene-Homopolymer) and PEI-EP (PolyEthyleneImine–Epoxy resin), for reducing the leakage current and enhancing the mobility among the source and drain channel. The parameter values, such as drain current IDS, threshold voltage Vt and mobility for the designed tri-layer dielectric OTFT, are evaluated and compared with the single layer and bi-layer OTFT models. Thus, the attained mobility, drain current and threshold voltage for the proposed OTFT model are 0.0215 cm2/(V·s), –4.44 mA for –10 V gate and –2.5 V drain voltage (VDS) and threshold value 0.2445 V (Vt) for gate voltage –10 V (VG). These attained parameter values are greater than the single- and bi-layer dielectric OTFT models. Thus, the mathematical modeling of the designed tri-layer dielectric OTFT model enhances the electrical characteristics of the other OTFT models.
About the Authors
D. Panghal
Deenbandhu Chhotu Ram University of Science and Technology
India
India
Deepika Panghal — Research Scholar, Department of ECE
Sonepat, 131039
R. Yadav
Deenbandhu Chhotu Ram University of Science and Technology
India
India
Rekha Yadav — D.Sc. Associate Professor, Department of ECE
sc 57208815836
Sonepat, 131039
References
1. Ana F., Najeeb-ud-Din. An analytical modeling approach to the electrical behavior of the bottom-contact organic thin-film transistors in presence of the trap states. Journal of Computational Electronics, 2019, vol. 18, no. 2, pp. 543–552. https://doi.org/10.1007/s10825-019-01314-6
2. Marinov O., Deen M.J., Jiménez-Tejada J.A., Chen C.H. Variablerange hopping charge transport in organic thin-film transistors. Physics Reports, 2020, vol. 844, pp. 1–105. https://doi.org/10.1016/j.physrep.2019.12.002
3. Ishaku A.A., Gleskova H. Potential of low-voltage organic transistors with high on-state drain current for temperature sensor development. Organic Electronics, 2021, vol. 93, pp. 106152. https://doi.org/10.1016/j.orgel.2021.106152
4. Jiménez Tejada J.A., Lopez-Varo P., Chaure N.B., Chambrier I., Cammidge A.N., Cook M.J., Jafari-Fini A., Ray A.K. Organic thin film transistors using a liquid crystalline palladium phthalocyanine as active layer. Journal of Applied Physics, 2018, vol. 123, no. 11, pp. 115501. https://doi.org/10.1063/1.5017472
5. Krammer M., Borchert J.W., Petritz A., Karner-Petritz E., Schider G., Stadlober B., Klauk H., Zojer K. Critical evaluation of organic thinfilm transistor models. Crystals, 2019, vol. 9, no. 2, pp. 85. https://doi.org/10.3390/cryst9020085
6. Shiwaku R., Tamura M., Matsui H., Takeda Y., Murase T., Tokito S. Charge carrier distribution in low-voltage dual-gate organic thin-film transistors. Applied Sciences, 2018, vol. 8, no. 8, pp. 1341. https://doi.org/10.3390/app8081341
7. Teja K.B., Gupta N. Substrate selection framework for organic thinfilm transistor based on flexibility and reliability issues. IEEE Journal on Flexible Electronics, 2022, vol. 1, no. 2, pp. 141–149. https://doi.org/10.1109/jflex.2022.3178674
8. Dadhich S., Dwivedi A.D., Mathur G. Numerical simulation and analytical modelling of C8-BTBT-C8 organic transistor and analysis of semiconductor thickness. Lecture Notes in Electrical Engineering, 2022, vol. 862, pp. 669–680. https://doi.org/10.1007/978-981-19-0252-9_60
9. Jo S.W., Cho S., Kim C.H. Key factors affecting contact resistance in coplanar organic thin-film transistors. Journal of Physics D: Applied Physics, 2022, vol. 55, no. 40, pp. 405101. https://doi.org/10.1088/1361-6463/ac8124
10. Pruefer J., Leise J., Borchert J.W., Klauk H., Darbandy G., Nikolaou A., Iñíguez B., Gneiting T., Kloes A. Modeling the shortchannel effects in coplanar organic thin-film transistors. IEEE Transactions on Electron Devices, 2022, vol. 69, no. 3, pp. 1099– 1106. https://doi.org/10.1109/ted.2022.3145779
11. Cortes-Ordonez H., Jacob S., Mohamed F., Ghibaudo G., Iniguez B. Analysis and compact modeling of gate capacitance in organic thinfilm transistors. IEEE Transactions on Electron Devices, 2019, vol. 66, no. 5, pp. 2370–2374. https://doi.org/10.1109/ted.2019.2906827
12. Borthakur T., Sarma R. Top-contact pentacene-based organic thin film transistor (OTFT) with N,N′-Bis (3-methyl phenyl)-N,N′-diphenyl benzidine (TPD)/Au bilayer source-drain electrode. Journal of Electronic Materials, 2018, vol. 47, no. 1, pp. 627–632. https://doi.org/10.1007/s11664-017-5820-2
13. Li N., Deng W., Wu W., Luo Z., Huang J. A mobility model considering temperature and contact resistance in organic thin-film transistors. IEEE Journal of the Electron Devices Society, 2020, vol. 8, pp. 189–194. https://doi.org/10.1109/jeds.2020.2974031
14. Cortes-Ordonez H., Haddad C., Mescot X., Romanjek K., Ghibaudo G., Estrada M., Cerdeira A., Iniguez B. Parameter Extraction and Compact Modeling of OTFTs From 150 K to 350 K. IEEE Transactions on Electron Devices, 2020, vol. 67, no. 12, pp. 5685–5692. https://doi.org/10.1109/ted.2020.3032082
15. Leise J., Pruefer J., Darbandy G., Seifaei M., Manoli Y., Klauk H., Zschieschang U., Iniguez B., Kloes A. Charge-based compact modeling of capacitances in staggered multi-finger OTFTs. IEEE Journal of the Electron Devices Society, 2020, vol. 8, pp. 396–406. https://doi.org/10.1109/jeds.2020.2978400
Review
For citations:
Panghal D., Yadav R. Mathematical modelling of tri-layer dielectric OTFT based on pentacene semiconductor for enhancing the electrical characteristics. Scientific and Technical Journal of Information Technologies, Mechanics and Optics. 2023;23(3):473-482. https://doi.org/10.17586/2226-1494-2023-23-3-473-482
Views:
10
Email this article 