A new analytical model of drain current and small signal parameters for AlGaN-GaN high-electron-mobility transistors
https://doi.org/10.17586/2226-1494-2022-22-1-147-154
Abstract
The paper proposes a new analytical model of the drain current in AlGaN-GaN high-electron-mobility transistors (HEMT) on the basis of a polynomial expression for the Fermi level as a function of the concentration of charge carriers. The study investigated the influence of parasitic resistances (source and drain sides), high-speed saturation, the amount of aluminum in the AlGaN barrier, and low field mobility. To isolate the output characteristics, cut-off frequency and steepness, the parameters of the hyper frequency signal were developed. Comparison of analytical calculations with experimental measurements confirmed the validity of the proposed model.
Keywords
AlGaN-GaN,
HEMTs,
2-DEG two-dimensional electron gas,
current–voltage characteristics,
cut-off frequencies,
Transconductance
Supporting agencies: This work carried out at the Faculty of Sciences Ain Chok Km 8, Hassan II University, Casablanca, Morocco.
About the Authors
A. Farti
Hassan II University of Casablanca
Morocco
Morocco
Azzeddine Farti — PhD, Associate Professor
Casablanca, 20190
A. Touhami
Hassan II University of Casablanca
Morocco
Morocco
Abdelkader Touhami — D.Sc, Full Professor
sc 8158211000
Casablanca, 20190
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Review
For citations:
Farti A., Touhami A. A new analytical model of drain current and small signal parameters for AlGaN-GaN high-electron-mobility transistors. Scientific and Technical Journal of Information Technologies, Mechanics and Optics. 2022;22(1):147-154. https://doi.org/10.17586/2226-1494-2022-22-1-147-154
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