Ivanov A.Yu., Sharofidinov Sh.Sh., Panov D.I., Kremleva A.V., Bauman D.A., Romanov A.E. Forming a thick layer of ε-Ga2O3 on the GaN sublayer with V-defects at the interface. Scientific and Technical Journal of Information Technologies, Mechanics and Optics. 2024;24(6):943-948. (In Russ.) https://doi.org/10.17586/2226-1494-2024-24-6-943-948
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