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Scientific and Technical Journal of Information Technologies, Mechanics and Optics

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Papylev D.S., Babichev A.V., Gladyshev A.G., Karachinsky L.Ya., Andryushkin V.V., Novikov I.I., Efimov A.O., Egorov A.Yu., Nadtochiy A.M. Influence of the growth rate of a highly strained InGaAs quantum well on the photoluminescence of a heterostructures grown on GaAs substrate. Scientific and Technical Journal of Information Technologies, Mechanics and Optics. 2025;25(6):1058-1066. (In Russ.) https://doi.org/10.17586/2226-1494-2025-25-6-1058-1066

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ISSN 2226-1494 (Print)
ISSN 2500-0373 (Online)

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